Early Fault Detection in SiC-MOSFET with Application in Boost Converter

Leobardo Hernandez, Climaco Arvizu, Alejandro Tapia, Mario Ponce, Abraham Claudio, Marco Rodriguez, Jesus Aguayo

Abstract


This paper presents the design of a fault detection circuit applied to Mosfet of Silicon Carbide (SiC-Mosfet); fault detection is done by monitoring the behavior of the gate signal. The most important characteristics that have been made and reported specifically are: quick detection since the evaluation is done during the turn-on, allowing fast detection to short-circuit and open-circuit failure, small times for detection which prevents to spread the failure to the full system. To validate the fault detection circuit a boost converter with SiC-Mosfet was designed; results validate the robustness and reliability of the presented proposal.

Keywords


Power Mosfet, Silicon Carbide, fault-detection

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References


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